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DS: Fachverband Dünne Schichten
DS 6: Thin Film Chalcogenide Photovoltaics III (Focused Session -- Organiser: Ronning)
DS 6.1: Vortrag
Montag, 14. März 2011, 16:00–16:15, GER 37
Time dependent capacitance voltage measurements on Cu(In,Ga)Se2 Solar Cells — •Tobias Adler1, Wolfram Witte2, Dimitrios Hariskos2, and Andreas Klein1 — 1Darmstadt University of Technology, Institute of Materials Science, Petersenstrasse 32, D-64287 Darmstadt, Germany — 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestrasse 6, D-70565 Stuttgart, Germany
Capacitance Voltage (C-V) measurements are widely used to determine the doping density of semiconductor interfaces in dependence on the width of the space charge layer. In Cu(In,Ga)Se2 (CIGS) solar cells we observe a time dependent capacitance signal, which can be explained by different models like filling and emptying of electronic (metastable) defect states or by the diffusion of copper ions. The observed capacitance transients are compared to the different models.