Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: Interfaces and Surfaces
HL 26.2: Talk
Monday, March 14, 2011, 16:15–16:30, POT 06
Time Scaling of Silver Nano-Crystal Growth at the Interface of Silver Thick Film Electrodes on n-Type Silicon — •Stefan Kontermann1,2, Alexander Ruf1, and Ralf Preu1 — 1Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany — 2Fraunhofer Heinrich Hertz Institut, Energiecampus, Am Stollen 19, 38640 Goslar, Germany
The interface of silver thick film contacts on n-type silicon features nanoscale silver crystals. They carry the current across such interfaces and hence govern the contact resistance which is a main performance limiting parameter for semiconductor devices. The silver crystals form in pits on the silicon surface at the interface during a high temperature step. In earlier studies we simulated the growth of these pits by considering the probability of removing a silicon surface atom in dependence of its bond energy. In the present work we present a method for introducing a quantitative time scaling for these simulations. This method leads to good quantitative agreement between simulated and experimental data. It enables the prediction of pit formation and hence silver crystal growth for arbitrary process parameters like temperature and duration during silver thick film contact formation on n-type silicon.