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Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: III-V-Compounds: GaAs and related Materials

HL 3.3: Vortrag

Montag, 14. März 2011, 10:45–11:00, POT 151

Excitonic electron spin relaxation in a (110)-GaAs quantum well — •Stefan Oertel1, Jens Hübner1, Dieter Schuh2, Werner Wegscheider3, and Michael Oestreich11Universität Hannover, Inst. f. Festkörperphysik, Abt. Nanostrukturen — 2Universität Regensburg, Inst f. Experimentelle und Angewandte Physik — 3Solid State Physics Laboratory, ETH Zürich

We detect excitonic signatures within the many body electron hole system in a specially designed 9 and 4 nm (110)-GaAs triple quantum well structure using the electron spin relaxation time τs as an exciton marker. The intricate exciton spin relaxation mechanism is much better resolved in these structure due to the lack of the dominant and concealing Dyakonov-Perel spin relaxation mechanism for spins aligned along this growth direction. Time- and polarization resolved photoluminescence spectroscopy yields τs over a large density and temperature regime. The measured spin relaxation time τs is in good agreement with calculations based upon the theoretical exciton spin relaxation time and the exciton fraction within the electron hole system according to the so called Saha equation.

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