Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.44: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Homo- and heteroepitaxial GaP(100) surfaces in process gas ambients — Henning Döscher, Oliver Supplie, •Peter Kleinschmidt, Anja Dobrich, Sebastian Brückner, Christian Höhn, Antonio Müller, Claas Löbbel, and Thomas Hannappel — Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

Phosphorus based III-V semiconductors such as GaP and InP are commonly grown by metalorganic vapor phase epitaxy, where the process gas ambient has a crucial influence on the surface structure: P-rich surfaces feature hydrogen-stabilized and buckled P-dimers, a reconstruction with local p(2×2) and c(4×2) symmetries, and a flipping mechanism changing the orientation of individual dimers. A mixed dimer configuration is typical for III-rich surfaces, but only for GaP(100) in a nitrogen ambient an additional intermediate reconstruction was also observed. Heteroepitaxial growth on Si(100) introduces anti-phase disorder in GaP films, which can be observed by domains of mutually perpendicular dimer orientation on the surfaces.