Dresden 2011 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 31: Postersitzung II

MM 31.31: Poster

Mittwoch, 16. März 2011, 17:15–18:45, P5

Synthesis and characterization of functional metal oxide nanowires — •babak nasr, subho dasgupta, di wang, robert kruk, and horst hahn — Karlsruher Institut für Technologie, Institut für Nanotechnologie, D-76344 Eggenstein-Leopoldshafen,Germany

Semiconducting metal oxide nanowires (NWs) like SnO2, In2O3, ZnO have found a wide range of applications in electronic devices, such as varistors, gas sensors and lithium ion batteries. Doping with appropriate elements, such as indium (In), antimony (Sb) and tantalum (Ta) can change their optical and electrical properties. In this work undoped and doped SnO2 NWs were synthesized on (100) Si substrates by a catalyst-mediated vapor-liquid solid (VLS) process. Tin oxide*indium oxide NWs were successfully obtained at a constant gas flow rate (O2 1% and Ar, 99%, 100 sccm), 800*900°C temperature window and a growth time of 10 min. The impact of catalyst size on NW*s thickness was studied and it was found that smaller catalyst particles result in thinner NWs. The thickness of NWs was evaluated through scanning electron microscopy (SEM). The crystallographic structure, single crystallinity and growth direction were studied using X-ray diffractometry (XRD) and high-resolution*transmission microscopy (HRTEM) respectively. Well-defined lattice fringes suggested the growth direction along [101]. Compositional analyses via x-ray photoemission spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS) showed the presence of Sn and Sb as dopant. The NWs were aligned on a patterned substrate for further electrical characterization.