Dresden 2011 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 85: Electron and spin dynamics I
O 85.2: Vortrag
Donnerstag, 17. März 2011, 16:45–17:00, WIL A317
Dangling-bond and image-potential states on Ge(100) — •Jens Kopprasch1,2, Kristof Zielke1,2, Cornelius Gahl1, Christian Eickhoff1, Jörg Schäfer3, and Martin Weinelt1,2 — 1Max-Born-Institut, Max-Born-Straße 2a, 12489 Berlin, Germany — 2Freie Universität Berlin, Fachbereich Physik, Arnimallee 14, 14195 Berlin, Germany — 3Universität Würzburg, Fakultät für Physik und Astronomie, Am Hubland, 97074 Würzburg, Germany
Germanium is a material of growing interest in semiconductor industry debatted and used for solar cells, high-power transistors, infrared optics and x-ray detectors. Ge is an indirect semiconductor with a band gap of 0.67eV at 300K. The reconstruction of Ge(100) is comparable to the Si(100) surface. However, the surface electronic structure is still under debate.
In this talk we will present bichromatic 2PPE-measurements on Ge(100). We studied the photon-energy dependence of various transitions and identified the dangling-bond states Dup and Ddown as well as the first image-potential state n=1. Besides the energetics the lifetime of these states have been investigated. Furthermore we discuss hot carrier dynamics in the conduction band and the concomitant surface recombination which proceed on a picosecond timescale.