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Berlin 2012 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 19: Resistive switching II (jointly with DS, KR, HL)

Friday, March 30, 2012, 11:00–12:30, H 0111

11:00 DF 19.1 Resistive switching mechanism of Ti/HfO2/TiN RRAM cells studied by nondestructive hard x-ray photoelectron spectroscopy — •Małgorzata Sowińska, Thomas Bertaud, Damian Walczyk, Christian Walczyk, Sebastian Thiess, Wolfgang Drube, and Thomas Schroeder
11:15 DF 19.2 Pulse-induced resistive switching of CMOS embedded HfO2-based 1T1R cells — •damian walczyk, christian walczyk, thomas bertaud, małgorzata sowińska, mindaugas lukosius, steffen kubotsch, thomas schroeder, and christian wenger
11:30 DF 19.3 Resistive switching on HfO2-based metal-insulator-metal structures: effects of the top metal electrode and the oxygen partial pressure — •Thomas Bertaud, Damian Walczyk, Christian Walczyk, Steffen Kubotsch, Malgorzata Sowinska, Thomas Schroeder, Christophe Vallée, Vincent Jousseaume, and Christian Wenger
11:45 DF 19.4 A model for a non-volatile memory material: First principles study of Cu diffusion in α-cristobalite and α-quartz — •Martin Zelený, Jozsef Hegedüs, Adam. S. Foster, David. A. Drabold, Stephen. R. Elliott, and Risto. M. Nieminen
12:00 DF 19.5 Transient Processes in Response to Electronic Excitation of Phase Change Materials — •Martin Salinga and Martin Wimmer
12:15 DF 19.6 Nonvolatile resistive switching in Au/BiFeO3 rectifying junction — •Yao Shuai, Chuangui Wu, Wanli Zhang, Shengqiang Zhou, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, and Heidemarie Schmidt
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