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HL: Fachverband Halbleiterphysik
HL 104: Quantum Dots and Wires: Optical Properties V (mainly Indiviual Photons)
HL 104.6: Talk
Friday, March 30, 2012, 13:00–13:15, EW 201
Single photon emission from site-controlled InP quantum dots — Vasilij Baumann, •Christian Schneider, Florian Stumpf, Stefan Kremling, Lukas Worschech, Alfred Forchel, Sven Höfling, and Martin Kamp — Wilhelm Conrad Röntgen Center for Complex Material Systems, Technische Physik, Universität Würzburg
Single semiconductor quantum dots (QDs) turned out to be promising candidates to realize building blocks in the prospering research field of quantum information. Pronounced effects of light matter interaction between a single QD and an optical microcavity mode have been demonstrated and already exploited to fabricate single photon sources of high efficiency. A main obstacle towards the scalable fabrication of such devices is the self assembled growth method commonly applied to grow high quality quantum dots on GaAs substrates. Here, we discuss recent progress in the realization of well ordered arrays of InP quantum dots emitting in the visible spectral range. The QDs are ordered on nanohole lattices with pitches up to 1.25 µm. The large periods allow us to address overgrown single QDs via spatially resolved microphotoluminescence. While the average single QD emission linewidth amounts to 550 µeV, their bright emission features close to the detection maximum of highly efficient single photon detectors allows to carry out photon correlation measurments in an Hanbury Brown and Twiss configuration. We could extract a g(2)(τ=0) value as small as 0.13, clearly demonstrating the single photon emission from such a QD.