Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 14: Focus Session: Site-selective Growth of single Quantum Dots
HL 14.2: Topical Talk
Monday, March 26, 2012, 15:30–16:00, ER 164
Growth and characterization of site-selective quantum dots — •Mathieu Helfrich1, Philipp Schroth2, Sergey Lazarev2, Daniil Grigoriev3, Taras Slobodskyy4, Tilo Baumbach2,3, and Daniel M. Schaadt1,5 — 1DFG-Centrum für funktionelle Nanostrukturen (DFG-CFN), Karlsruher Institut für Technologie (KIT), Wolfgang-Gaede-Str. 1a, 76131 Karlsruhe, Germany — 2Institut für Synchrotronstrahlung / ANKA, Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1 ,76344 Eggenstein-Leopoldshafen, Germany — 3Laboratorium für Applikationen der Synchrotronstrahlung, Karlsruher Institut für Technologie (KIT), Engesserstraße 15, 76131 Karlsruhe, Germany — 4Institut für Angewandte Physik, Universität Hamburg, Jungiusstraße 11, 20355 Hamburg, Germany — 5Institut für Energieforschung und Physikalische Technologien, Technische Universität Clausthal, Am Stollen 19B, 38640 Goslar, Germany
Site-selective quantum dots (QDs) can be fabricated by lateral self-alignment or pre-structuring substrates. The latter method allows for a high degree of control of different parameters such as QD locations, size and shape. We will present a quantitative analysis of site-selective InAs QDs grown on pre-structured GaAs substrates. We tested several fabrication parameters including different fabrication techniques. Furthermore, we investigated post growth annealing as means of additional control on above mentioned parameters.