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Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 15: Graphene: Structure and Theory I

HL 15.4: Talk

Monday, March 26, 2012, 15:45–16:00, EW 201

Bernal graphite is a narrow gap semiconductorNicolas Garcia1, •Pablo Esquinazi2, Jose Barzola-Quiquia2, and Srujana Dusari21Laboratorio de Física de Sistemas Pequeños y Nanotecnología, Consejo Superior de Investigaciones Científicas, E-28006 Madrid, Spain — 2Division of Superconductivity and Magnetism, Institut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103 Leipzig, Germany

We have studied the resistance of a large number of highly oriented graphite samples with areas ranging from several mm2 to a few µm2 and thickness from ∼ 10 nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density < 109 cm−2 and the one from metalliclike internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap Eg ∼ 40 meV.

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