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Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 40: Impurities / Amorphous Semiconductors

Tuesday, March 27, 2012, 11:30–13:15, EW 015

11:30 HL 40.1 The dangling-bond defect in crystalline and amorphous silicon: insights from ab initio calculations of EPR parameters — •Gernot Pfanner, Christoph Freysoldt, and Jörg Neugebauer
11:45 HL 40.2 Vibrational spectra of charged point defects in ionic oxidesJianchuan Wang, •Christoph Freysoldt, and Jörg Neugebauer
12:00 HL 40.3 Evidence for Fe2+ in Wurtzite Coordination: Iron Doping Stabilizes ZnO Nanoparticles — •Jianping Xiao, Agnieszka Kuc, Suman Pokhrel, Marco Schowalter, Satyam Parlapalli, Andreas Rosenauer, Thomas Frauenheim, Lutz Mädler, Lars Pettersson, and Thomas Heine
12:15 HL 40.4 Defects in amorphous silicon nitrides: Si3N4-Si3Nx — •Leif Eric Hintzsche, Georg Kresse, Martijn Marsmann, Gerald Jordan, Changming Fang, and Thomas Watts
12:30 HL 40.5 Charge Carrier Density Control in In-based Multi Compound Solution Processed Oxide TFTs — •Marlis Ortel, Marko Marinkovic, Gesa Helms, and Veit Wagner
12:45 HL 40.6 THz spectroscopy of the 29 cm−1 oxygen vibrational line in natural silicon and isotopically enriched 28Si — •Kurt Lassmann, Boris Gorshunov, P.S. Korolev, E.S. Zhukova, V.P. Kalinsuhkin, N.V. Abrosimov, P.G. Sennikov, H.-J. Pohl, S. Zakel, and Martin Dressel
13:00 HL 40.7 Diffusion of Cu (I) in amorphous In2S3 thin films investigated by Rutherford backscattering spectroscopy — •Albert Juma, Paul Pistor, Thomas Dittrich, and Elke Wendler
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