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Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 71: Poster Session: Graphene / Topological Insulators / Interfaces and Surfaces

HL 71.13: Poster

Wednesday, March 28, 2012, 16:00–19:00, Poster D

Contact Resistance in Graphene Field Effect Transistors — •renjun du1, kristina hönes1, pablo robert1,2, fan wu1, hilbert von löhneysen1,2,3, and romain danneau1,21Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, Germany — 2Institute of Physics, Karlsruhe Institute of Technology, Karlsruhe, Germany — 3Institute for Solid-State Physics, Karlsruhe Institute of Technology, Karlsruhe, Germany

A high-quality junction between graphene and metallic contacts is crucial in the creation of high-performance graphene field effect transistors. In an ideal metal-graphene junction, the contact resistance is determined solely by the number of conduction modes in graphene. However, measurements of contact resistance have been inconsistent, and the factors that determine the contact resistance remain unclear. In this work, we achieved conduct patterns on the exfoliated graphene by performing e-beam lithography and evaporated palladium through ultra high vacuum (UHV) system. The contact resistance between palladium and graphene is measured at room temperature. Additionally, the dependence of extracted mobility on channel dimensions is studied.

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