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Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 95: Quantum Dots and Wires: Optical Properties III (mainly Cavities and Ultrafast Response)

HL 95.3: Talk

Friday, March 30, 2012, 10:00–10:15, EW 201

Strong Quantum Dot - Cavity coupling in submicron diameter AlAs/GaAs micropillar cavities — •Matthias Lermer1, Niels Gregersen2, Florian Dunzer1, Jesper Mørk2, Stephan Reitzenstein1, Alfred Forchel1, Sven Höfling1, and Martin Kamp11Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — 2DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Building 343, DK-2800 Kongens Lyngby, Denmark

Micropillar (MP) cavities with embedded quantum dots (QD) are a promising semiconductor based platform for the investigation and application of cavity quantum electrodynamic (cQED) effects, e.g. the strong QD - cavity coupling. A figure of merit for this regime is the ratio Q/sqrt(Vmode), expressing that it is preferable to realize MPs providing not only high Q factors but also small mode volumes Vmode. This puts stringent requirements to the design and the processing of the MPs, which show a drastic decrease of the Q factor in the low diameter limit due to sidewall scattering losses and mode mismatch. These effects limit Q to about 2,000 in the submicron diameter range. To overcome this problem, we have designed and implemented a novel AlAs/GaAs cavity design showing Q factors exceeding 10,000 for MPs with submicron diameters. A record-high vacuum Rabi splitting (VRS = 85 micro eV) of the strong coupling in MPs with modest oscillator strength QDs has been observed for a MP with Q = 13,600 and a diameter of 850 nm.

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