Berlin 2012 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 4: Spin-dependent Transport Phenomena

MA 4.4: Vortrag

Montag, 26. März 2012, 10:15–10:30, H 1012

Side-Jump Scattering Contribution to Anomalous Hall Effect from Magnetic Impurities — •Jürgen Weischenberg, Frank Freimuth, Stefan Blügel, and Yuriy Mokrousov — Peter Grünberg Institut & Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany

Recently, within the full-potential linearized augmented plane-wave scheme (FLAPW), we have implemented a method that allows for a calculation of the intrinsic [1] and side-jump (SJC) scattering-independent contributions to the anomalous Hall effect (AHE) from the electronic structure of a perfect crystal alone [2], assuming that the disorder in the system is short-ranged. Although the SJC depends neither on the impurity concentration nor the scattering strength, it is sensitive to the spin structure of the impurity potential, which makes it possible to consider different scenarios for side-jump scattering from magnetic impurities. We extended and applied our method to study the effects of scattering from magnetic impurities on the AHE in a variety of ferromagnetic materials. We also analyze the role of spin-flip processes for the AHE, which have been considered previously for the intrinsic contribution. Financial support by the HGF-YIG Programme VH-NG-513 is gratefully acknowledged.

[1] H. Zhang, F. Freimuth, S. Blügel, Y. Mokrousov and I. Souza, PRL 106, 117202 (2011)

[2] J. Weischenberg, F. Freimuth, J. Sinova, S. Blügel and Y. Mokrousov, PRL 107, 106601 (2011)