Berlin 2012 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 38: [DS] Organic electronics and photovoltaics: electronic properties I (jointly with CPP, HL, O)
O 38.1: Vortrag
Mittwoch, 28. März 2012, 09:30–09:45, H 2032
Design of novel dielectric surface modifications for perylene thin-film transistors — •Christian Effertz1, Ingolf Segger1, Philip Schulz1, Arno Classen2, Carsten Bolm2, and Matthias Wuttig1,3 — 1I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen — 2Institut für Organische Chemie (IOC), RWTH Aachen, 52056 Aachen — 3JARA FIT, Forschungszentrum Jülich, 52425 Jülich
Dielectric surface modifications (DSMs) can improve the performance of organic thin-film transistors (OTFTs) significantly. To gain a deeper understanding of this performance enhancement and to facilitate high mobility transistors, perylene based OTFTs utilizing novel dielectric surface modifications have been produced. Novel DSMs, which are based on derivates of tridecyltrichlorosilane (TTS) with different functional end-groups have been applied to tailor the adhesion energy of perylene. The resulting samples were characterized by electronic transport measurements, scanning probe microscopy and x-ray diffraction (XRD). Measurements of the surface free energy of the modified dielectric enabled the calculation of the adhesion energy of perylene upon these novel DSMs by the equation-of-state approach. These calculations demonstrate the successful tailoring of the adhesion energy. The insight gained in this study was used to carefully choose further novel DSMs based on polymers. Utilizing these novel DSMs, perylene thin-films and TFTs with a superior film quality, in terms of crystallinity and morphology, as well as performance, in terms of mobility, have been produced[1]. [1]: Effertz, C., et. al. (2011), Adv. Func. Mater. doi: 10.1002/adfm.201101299