Berlin 2012 – scientific programme

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O: Fachverband Oberflächenphysik

O 86: Graphene VI

O 86.5: Talk

Friday, March 30, 2012, 11:30–11:45, MA 041

Photoluminescence in graphene antidot lattices — Daniel Hutzler, •Stefanie Heydrich, Jonathan Eroms, Dieter Weiss, Tobias Korn, and Christian Schüller — Institut für Experimentelle und Angewandte Physik, Universität Regensburg

We present recent observations of the behavior of photoluminescence in patterned single and bilayer graphene. It was reported previously [1,2], that femtosecond pulsed laser excitation creates an electron-hole plasma in graphene which emits a broadband luminescence. We have observed this luminescence in graphene patterned with antidot lattices as well as in pristine graphene.

We utilize fast, high-resolution scans to map graphene flakes on Si/SiO2-substrates. Thus, a luminescence image of both the flake and its structured areas is created.

In structured areas, the absolute intensity of the photoluminescence is smaller than in pristine flakes due to parts of the graphene having been etched away. However, the observed signal in the patterned flakes is larger than expected from the mere amount of illuminated graphene. This enhancement is roughly 1/15 of the expected signal in single layer and 1/7 in bilayer graphene. It is possible that additional charge carriers at the antidot edges [3] cause this increase in luminescence.

Financial support by the DFG via GRK 1570 is gratefully acknowledged.

[1] R.J. Stöhr et al., Phys. Rev. B 82, 121408(R) (2010)

[2] C.H. Lui et al., Phys. Rev. Lett. 105, 127404 (2010)

[3] S. Heydrich et al., Appl. Phys. Lett. 97, 043113 (2010)