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SYRS: Symposium Resistive Switching

SYRS 2: Poster: Resistive switching (jointly organized by DS, DF, KR, HL)

SYRS 2.22: Poster

Thursday, March 29, 2012, 17:30–19:00, Poster E

Investigations on the Ti_0.5Zr_0.25Hf_0.25NiSn_1−xSb_x system. — •Michael Schwall and Benjamin Balke — Institute of Inorganic Chemistry and Analytical Chemistry, Johannes Gutenberg - University, Mainz

Heusler compounds with C1_b structure were reported from several groups in Asia and the USA as suitable for thermoelectric applications. Thereby, is the best published Figure of Merit ZT = 1.5 for a n-type material was found in the Ti_0.5Zr_0.25Hf_0.25NiSn_1−xSb_x system and presented by Toschiba and Toyota already in 2005. Since then, nobody was able o reproduce these results. Now, we were able to - almost - reach their high ZT values. In this study, we investigated the reasons for this outstanding thermoelectric properties in the Ti_0.5Zr_0.25Hf_0.25NiSn_1−xSb_x system. The effect of the microstructure on the transport properties will be described in details. The authors gratefully acknowledge the financial support by the "thermoHeusler" Project (Project No. 0327876D) of the German Federal Ministry of Economics and Technology (BMWi).