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Berlin 2012 – scientific programme

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SYRS: Symposium Resistive Switching

SYRS 3: Resistive switching I (jointly organized by DS, DF, KR, HL)

SYRS 3.4: Talk

Friday, March 30, 2012, 10:15–10:30, H 0111

Resistive switching in different forming states of Ti/ Pr0.48Ca0.52MnO3 junctions — •Chanwoo Park1, Anja Herpers1, Rainer Bruchhaus1, Johan Verbeeck2, Ricardo Egoavil2, Francesco Borgatti3, Giancarlo Panaccione4, Francesco Offi5, and Regina Dittmann11PGI-7, FZ Jülich — 2EMAT, University of Antwerp, Belgium — 3ISMN-CNR, Bologna, Italy — 4Laboratorio Nazionale TASC-INFM-CNR, Trieste, Italy — 5CNISM and Dipartimento di Fisica, Università Roma Tre, Rome, Italy

We investigated the resistive switching (RS) characteristics of Ti/Pr0.48Ca0.52MnO3 (PCMO) junctions. RS characteristics were observed after a first forming (1stF) procedure, which changes the initial resistance state to a high resistance state (HRS) which shows a clear area dependence. By performing Hard X-ray Photoelectron Spectroscopy for different resistive states, we found a change of the Ti2p peak intensity after the 1stF which is associated with the formation of TiO2 at the interface. Moreover, the shape and position of the Mn2p peak hints on the reduction of Mn. The formation of TiOx at the Ti/PCMO interface after the 1stF was confirmed by cross-sectional Transmission Electron Microscope investigations. The results indicate that the 1stF step is related to a redox process at the Ti/PCMO interface. Moreover, we were able to perform a second forming step which changes the HRS to the low resistance. The area dependence disappeared after the second forming. This implies that conducting filaments might form at the Ti/PCMO interface.

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