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TT: Fachverband Tiefe Temperaturen

TT 36: Superconductivity: Cryodetectors

TT 36.3: Talk

Thursday, March 29, 2012, 10:00–10:15, H 2053

Thin NbN film structures on SOI for SNSPD — •Konstantin Il'in¹, Stephan Kurz¹, Dagmar Henrich¹, Matthias Hofherr¹, Michael Siegel¹, Alexei Semenov², and Heinz-Wilhelm Huebers² — ¹IMS, KIT, Karlsruhe, Germany — ²DLR, Berlin, Germany

Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development will be presented and discussed.