Hannover 2013 – wissenschaftliches Programm
Q 9.3: Vortrag
Montag, 18. März 2013, 14:30–14:45, A 310
Atomic defects in silicon carbide LEDs as a perspective single photon source — •Franziska Fuchs1, Victor Soltamov2, Stefan Väth1, Pavel Baranov2, Eugeny Mokhov2, Georgy Astakhov1, and Vladimir Dyakonov1,3 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2Ioffe Physical-Technical Institute, St. Petersburg, 194021 Russia — 3ZAE Bayern, 97074 Würzburg
Single photon sources, reliably emitting on demand, are necessary for e.g. optical quantum computers. For this purpose, several systems seem suitable, including atoms, molecules, quantum dots and color centers in diamond. But all these systems are difficult to implement, since they either only work at low temperatures, or do not emit at typical wavelengths used in existing telecommunication infrastructure. We suggest another system - silicon vacancy defects in silicon carbide, emitting photons in the near infrared . We fabricated light emitting diodes based on intrinsic defects in silicon carbide. The room temperature electroluminescence reveals two strong emission bands in visible and NIR, the latter assigned to silicon vacancy defects. Our approach can be used to realize an electrically driven single photon source for quantum telecommunication.
Riedel et al.: Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide, Phys. Rev. Lett.109,226402(2012)