Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 108: Poster: Ultra-fast phenomena / Optical properties / Semiconductor laser / Devices and device concepts

HL 108.24: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Photocapacitance change in YMnO3-based MIFS in the visible light regime — •O S Choudhary1, A Bogusz1, L P Selvaraj1, V John1, D Bürger1, I Skorupa1, A Lawerenz2, O G Schmidt1,3, and H Schmidt11Faculty of Electrical Engineering and Information Technology, Chemnitz University of Technology, 09107 Chemnitz, Germany — 2CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, 99099 Erfurt, Germany — 3Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany

YMnO3 is one of the few materials that exhibit ferroelectricity and antiferromagnetism. Metal-YMnO3-metal thin film structures can be switched between a high resistance state (HRS) and a low resistance state (LRS), when a positive and negative writing bias is applied, respectively. This work investigates the effect of light-irradiation on the capacitance of YMnO3-based metal-ferroelectric-insulator-semiconductor (MFIS) structures. The DC bias for the capacitance measurements was swept from +10 to -20 V and back under different light-irradiation at a sweep rate of ca. 103 mV/s. It has been found that under dark conditions two nonvolatile capacitance minima exists at -11 and at -3.55 V, possibly when the YMnO3 is in the LRS and HRS state, respectively. If we rewrite the +10 and -20 V branch in shorter period of time then, low capacitance state (LCS) is non-volatile and pseudo volatile, respectively. Under illumination the capacitance at the two minima increases in the visible spectral range, depending on the wavelength illumination, YMnO3 thickness and YMnO3 capacitance state.

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