Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 108: Poster: Ultra-fast phenomena / Optical properties / Semiconductor laser / Devices and device concepts

HL 108.27: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Transparent p-CuI/n-ZnO heterojunction diodes — •Friedrich-Leonhard Schein1, Tammo Böntgen1,2, Jörg Lenzner1, Michael Lorenz1, Holger von Wenckstern1, and Marius Grundmann11Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig, Germany — 2present address: Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover, Germany

We have investigated the wide bandgap (Eg=3.1 eV) p-type semiconductor γ-copper(I)-iodide (CuI) [1,2] as an alternative candidate to p-type transparent semiconducting oxides like SnO [3] or ZnCo2O4 [4]. Two facile methods were used to fabricate CuI thin-films, either iodization of metallic Cu films or thermal evaporation of CuI powder. Hall-effect measurements of these transparent CuI films revealed a hole mobility of about 5−15 cm2/Vs, a hole density of (0.2−3)×1019 cm−3 and a resistivity of 0.1−0.2 Ωcm. Atomic force and scanning electron microscopy as well as X-ray diffraction and optical transmission measurements of CuI on glass substrates and on c-ZnO will be discussed.

Heterostructures consisting of p-CuI on pulsed-laser deposited n-ZnO were fabricated on a-sapphire substrates and characterized electrically. The diodes showed large rectification ratios If/Ir > 107 at ± 2 V and ideality factors down to 1.5.

[1] F.-L. Schein et al., Appl. Phys. Lett. 102, 092109 (2013).

[2] M. Grundmann, Phys. Status Solidi A 210, 1671 (2013).

[3] E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010).

[4] F.-L. Schein et al., IEEE Electron Device Lett. 33, 676 (2012).

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