Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 108: Poster: Ultra-fast phenomena / Optical properties / Semiconductor laser / Devices and device concepts

HL 108.30: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Fast read and write operations in quantum dot-based memory devices — •C. Pillich1, D. Zhou1, A. Beckel1, D. Bimberg2, T. Nowozin2, M. Geller1, and A. Lorke11Faculty of Physics and CENIDE, University of Duisburg-Essen, Lotharstraße 1, 47057 Duisburg, Germany — 2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

Self-assembled quantum dots (QDs) are ideally suited as building blocks for memory devices. Large localization energies enable long information storage and times up to 1.6 s at room temperature have already been demonstrated.1

Here we use a memory structure with a layer of QDs as floating gate in a high electron mobility transistor (HEMT). The HEMT is used to prepare and read the charge information of the QDs filled with 0, 2 or up to 6 electrons each, with single charging state resolution.2

In comparison with conventional flash memory, high bandwidth capability for writing and reading operations is desirable. Here we demonstrate read-out times down to 3 ns at a temperature of T=4 K and the capability of writing the information by hot charge injection, which can be used to enhance the ratio between writing and storage times.

[1] A. Marent et al., Appl. Phys. Lett. 91, 242109 (2007).
[2] B. Marquardt et al., Appl. Phys. Lett. 95, 22113, (2009).

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