Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 112: Energy materials: CIGS and related photovoltaics

HL 112.3: Talk

Friday, April 4, 2014, 10:00–10:15, POT 112

EDX - measurements on lamellae of CIGSe solar cells — •Sven Schönherr, Alexander Kusch, Philipp Schöppe, Michael Oertel, Udo Reislöhner, and Carsten Ronning — Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany

Cu(In, Ga)Se₂ solar cells were processed in a sequential process. First, a multi-layer system containing copper, indium and gallium on top of a molybdenum back contact was deposited by DC - magnetron sputtering with different Ga profiles. Afterwards, the metallic precursor was reactively annealed in two steps in a selenium vapour atmosphere where it converted to an about 2 µm thick CIGSe absorber layer. Completing the solar cell, a CdS buffer layer was deposited via chemical bath deposition and as front contact a ZnO layer was sputtered on top. From these cells lamellae with a thickness of about 200 nm were prepared using a focused ion beam (FIB) system. The thin cross sections lead to a high spatial resolution which is mainly limited by the diameter of the electron beam. Energy dispersive X-ray spectroscopy measurements were taken at lamellae with different sputtered Ga profiles in the precursors and annealed with different selenization temperatures in the first annealing step.