Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 112: Energy materials: CIGS and related photovoltaics

HL 112.6: Vortrag

Freitag, 4. April 2014, 10:45–11:00, POT 112

Band alignment at the In2S3Cu(In,Ga)(S,Se)2 interface in thin-film solar cells — •Dirk Hauschild1, Katharina Treiber1, Stephan Pohlner2, Robert Lechner2, Jörg Palm2, Clemens Heske3,4,5,6, Lothar Weinhardt3,5,6, and Friedrich Reinert11Experimental Physics VII, University of Wuerzburg, Germany — 2AVANCIS GmbH & Co. KG, Munich, Germany — 3Institute for Photon Science and Synchrotron Radiation, KIT, Germany — 4Department of Chemistry, University of Nevada, Las Vegas (UNLV) — 5Institute for Chemical Technology and Polymer Chemistry, KIT, Germany — 6ANKA Synchrotron Radiation Facility, KIT, Germany

Both on laboratory scale as well as in large area industrial production, Cu(In,Ga)(S,Se)2 (CIGSSe) based solar cells have been processed for many years with a CdS buffer layer between absorber and transparent front contact, using a chemical bath deposition process. However, CdS is toxic and therefore its usage increases the production and recycling costs. A substitution of CdS by In2S3 provides a Cd-free alternative that can be integrated in a dry inline production. The In2S3CIGSSe interface has been investigated using ultraviolet (UPS) and X-ray photoelectron spectroscopy (XPS), as well as inverse photoemission (IPES). The combination of these techniques allows the determination of the conduction and valence band extrema and reveals a complete picture of the band alignment at the In2S3CIGSSe interface. In this contribution we will compare the band alignments with and without tempering of the In2S3CIGSSe interface structure and discuss the implications for the performance of the device.

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