Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 19: Nitrides: Devices

HL 19.2: Vortrag

Montag, 31. März 2014, 15:15–15:30, POT 151

Light Emitters Based on GaN Nano-Stripes with Semipolar Quantum Wells — •Robert Anton Richard Leute1, Junjun Wang1, Tobias Meisch1, Benjamin Neuschl2, Klaus Thonke2, and Ferdinand Scholz11Institute of Optoelectronics, Ulm University, 89081 Ulm, Germany — 2Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, 89081 Ulm, Germany

Patterning of silicon dioxide masks on c-oriented GaN/AlGaN templates by imprint lithography allows to fabricate InGaN/GaN nano-stripes with semipolar {1011} side facets. These stripes have a triangular cross section and form a 1D grating with a period of 260 nm. Subsequent embedding in GaN creates an asymmetric waveguide. The emission of the quantum wells is investigated under electrical and optical excitation. Photoluminescence measurements are performed at varying temperatures. We discuss the performance and suitability of such nano-structures for optical devices.

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