Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 23: Quantum wires: Transport properties (with TT)

HL 23.5: Vortrag

Montag, 31. März 2014, 17:00–17:15, POT 006

Resistance profiling of freestanding GaAs nanowires by multitip STM — •Stefan Korte1, Matthias Steidl2, Hubertus Junker1, Weihong Zhao2, Werner Prost3, Vasily Cherepanov1, Bert Voigtländer1, Peter Kleinschmidt2, and Thomas Hannappel21Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany, and JARA-Fundamentals of Future Information Technology — 2Photovoltaics Group, Institute for Physics, Technische Universität Ilmenau, 98684 Ilmenau, Germany — 3CeNIDE and Center for Semiconductor Technology and Optoelectronics, University of Duisburg-Essen, 47057 Duisburg, Germany

Due to their specific one-dimensional geometry, III-V semiconductor nanowires are promising candidates for future optoelectronic devices. However, for the fabrication of novel high performance nanowire devices a precise control of doping profile is indispensable. We use a multitip STM as nanoprober to reveal the electrical transport properties of freestanding GaAs nanowires. p-doped GaAs nanowires are grown by Au-assisted metal-organic vapor-phase epitaxy (MOVPE) on GaAs(111)B and GaP(111)B substrates. Conductance profiles along the nanowires were obtained with four point probe measurements. Nanowires grown on different substrates, using a two temperature step growth mode or constant substrate temperature, all exhibit highly non-linear axial resistance profiles.

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