Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 32: Poster: ZnO and its relatives

HL 32.1: Poster

Montag, 31. März 2014, 17:00–20:00, P2

Method of choice for the fabrication of high-quality ZnO thin film based Schottky diodes — •Stefan Müller1, Holger von Wenckstern1, Florian Schmidt1, Robert Heinhold2, Martin Allen2, and Marius Grundmann11Universität Leipzig, Semiconductor Physics Group, Institut für Experimentelle Physik II, Leipzig, Germany — 2The MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch 8043, New Zealand

In this contribution we present a comprehensive comparison of electrical properties of differently fabricated high quality Schottky contacts on ZnO thin films grown by pulsed laser deposition. Thermally evaporated Pd/ZnO Schottky contacts exhibit ideality factors as low as 1.06 due to their high lateral homogeneity. The effective Richardson constant of such Schottky contacts is with 7.7±4.8 A cm−2 K−2 close to the theoretical value of 32 A cm−2 K−2. At the same time the on/off ratio of such Schottky contacts is at most five orders of magnitude due to their comparably small effective barrier height (≈0.7 eV). The largest effective barrier heights up to 1.11 eV and on/off ratios up to 7×1010 were obtained for reactively sputtered PdOx/ZnO Schottky contacts. However, the ideality factors are increased to 1.3. Eclipse pulsed laser deposited IrOx/ZnO Schottky contacts combine the very good homogeneity (n≈1.1), the large barrier height (0.96 eV) and large on/off ratio (≈ 9 orders of magnitude) of evaporated and sputtered contacts.

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