Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 45: Optical properties II
HL 45.3: Vortrag
Dienstag, 1. April 2014, 11:45–12:00, POT 006
Investigation of the effective mass in GaAsN — •Faina Eßer1,2, Oleksiy Drachenko1, Harald Schneider1, Amalia Patanè3, Mark Hopkinson4, and Manfred Helm1,2 — 1Institute of Ion Beam Physics and Material Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany — 2Technische Universität Dresden, 01062 Dresden, Germany — 3The University of Nottingham, Nottingham, United Kingdom — 4The University of Sheffield, Sheffield, United Kingdom
As a member of diluted nitrides, GaAsN is a highly interesting material system for many application purposes such as LEDs, lasers, solar cells, and infrared photodetectors because of the tuning possibility of these devices by the variation of the nitrogen content. For an accurate description of this material system, a profound knowledge of the band structure and in particular the effective mass (EM) is crucial. Because of the inconsistency of previous results, which can be traced down to the particular investigation method, we apply several methods on one sample series of GaAsN containing samples with 0.1 - 1 percent of nitrogen. Cyclotron resonance spectroscopy, beeing the most direct method, reveals that the EM is not significantly affected by the nitrogen doping. Photoluminescence, on the other hand, stems from several transitions, which are not resolved spectrally, but identified in time-resolved measurements. We discuss the different behaviour of the involved transitions in magnetic fields up to 7 T (static) and 41 T (pulsed).