Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 65: Devices
HL 65.2: Vortrag
Mittwoch, 2. April 2014, 11:45–12:00, POT 151
Non-volatile capacitance change in BiFeO3-coated photocapacitive MIS diodes — •l p Selvaraj1, t You1, v John1, h Zeng2, d Bürger1, i Skorupa1, a Lawerenz3, o g Schmidt1,4, and h Schmidt1 — 1Faculty of Electrical Engineering and Information Technology, Chemnitz University of Technology, 09107 Chemnitz, Germany — 2State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, 99099 Erfurt, Germany — 4Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany
Metal-BiFeO3-metal thin film structures can be switched between a high resistance state (HRS) and a low resistance state (LRS), when a positive and negative writing bias is applied, respectively. The current investigation deals with the effect of light-irradiation on the capacitance of BiFeO3-coated metal-insulator-semiconductor (MIS) diodes. N-type conducting BiFeO3 thin films of nominal thickness 70, 140, 210, 280, 350 and 490 nm have been grown by pulsed laser deposition on p-type silicon wafers substrates having an 163 nm thick SiN layer. The DC bias for the capacitance measurements was swept from +10 V to -15 V and back under different light-irradiation at a sweep rate of ca. 59 mV/s. It has been found that under dark conditions two nonvolatile capacitance minima can be found at -3.8 V and at -6.8 V possibly when the BiFeO3 is in the HRS and LRS state, respectively. The retention measurement result shows non-volatile memory in capacitance which can be used for photocapacitive detectors.