|  | 15:00 | HL 69.1 | Topical Talk:
            
            
              
                Electronic properties of the transparent semiconducting oxides Ga2O3 and In2O3 — •Recardo Manzke | 
        
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              |  | 15:30 | HL 69.2 | Dielectric function of In2O3 from the mid-infrared into the vacuum ultraviolet — •Rüdiger Goldhahn, Jakob Nixdorf, Christian Lidig, Klaus Irmscher, Zbigniew Gałazka, Oliver Bierwagen, James S. Speck, Christoph Cobet, and Martin Feneberg | 
        
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              |  | 15:45 | HL 69.3 | Barrier height of Ag on In2O3 (111) single crystals — •maryam nazarzadehmoafi, stephan machulik, florian Neske, christoph janowitz, zbigniew galazka, and recardo manzke | 
        
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              |  | 16:00 | HL 69.4 | Metal contacts on the beta-Ga2O3 single crystal (001) surface — •Stephan Machulik, Maryam Nazarzadehmoafi, Mansour Mohamed, Andreas Siebert, Christoph Janowitz, Zbigniew Galazka, and Recardo Manzke | 
        
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              |  | 16:15 | HL 69.5 | Sputtered SnO2 degenerately doped with Ta or Sb - A comparative study for applications in transparent electronics — •Mirko Weidner and Andreas Klein | 
        
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              |  | 16:30 | HL 69.6 | Structural and electrical properties of Nb doped TiO2 anatase films (2 - 17 at.%) sputtered with plasma emission control — •Sebastian Schipporeit, Sanat Kumar Mukherjee, Hans-Werner Becker, Andrew Paolo Cádiz Bedini, Christian Notthoff, Abdelkader Nebatti, Detlef Rogalla, Azadeh Soleimani-Estafani, and Dieter Mergel | 
        
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            |  | 16:45 |  | Coffee break (15 min.) | 
        
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              |  | 17:00 | HL 69.7 | Topical Talk:
            
            
              
                Surface properties of In2O3 and other semiconducting metal oxides — •Ulrike Diebold | 
        
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              |  | 17:30 | HL 69.8 | STM and STS at the InO(111) cleavage surface — Robert Zielinski, Andrea Lenz, Josephine Schuppang, Mario Dähne, and •Holger Eisele | 
        
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              |  | 17:45 | HL 69.9 | Electrical properties of In2O3 single crystals: distinction between surface and bulk conductivity — •Klaus Irmscher, Mike Pietsch, Wolfram Troeder, and Zbigniew Galazka | 
        
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              |  | 18:00 | HL 69.10 | Electronic surface properties of stoichiometric and defect-rich indium oxide films prepared by MOCVD — •Marcel Himmerlich, Chunyu Wang, Volker Cimalla, Oliver Ambacher, and Stefan Krischok | 
        
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              |  | 18:15 | HL 69.11 | Stability of low-index bcc-In2O3 surfaces under O-Rich-, In-Rich-, and Sn-doping molecular beam epitaxy conditions: An Experimental Study — •Oliver Bierwagen, Patrick Vogt, and James S. Speck | 
        
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              |  | 18:30 | HL 69.12 | Surface structure of metal oxides via classical and quantum mechanical rainbow scattering — •Marco Busch, Eric Meyer, Jan Seifert, Helmut Winter, Klaus Irmscher, and Zbigniew Galazka | 
        
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