Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 70: Semiconductor laser I: VECSEL and cascade lasers

HL 70.7: Vortrag

Mittwoch, 2. April 2014, 16:30–16:45, POT 112

Frequency doubled AlGaInP-VECSELs for interference lithography — •Hermann Kahle, Clarissa Wink, Jonas Weber, Ulrich Rengstl, Hendrik Niederbracht, Thomas Schwarzbäck, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

The wide range of applications in biophotonics, television technologies, spectroscopy and lithography made the vertical external-cavity surface-emitting laser (VECSEL) an important category of power scalable lasers. We present an optically pumped, frequency doubled AlGaInP-VECSEL with a total of 20 compressively strained quantum wells (QWs). The QW packages are placed in a separate confinement heterostructure in a resonant periodic gain (RPG) design within strain-compensating quaternary AlGaInP barriers and cladding layers, respectively. The VECSEL operates in continuous-wave operation at fundamental wavelengths around 660 nm. Wavelength tuning measurements of the fundamental and frequency doubled output, realized by rotation of an intra-cavity birefringent filter will be shown. High power ultraviolet output can be used as light source for interference lithography. Details of the fabrication, characterization, laser setup as well as test structures of the application aiming on pre-structuring of semiconductor samples will be shown. A new power-scaling concept for semiconductor disk lasers towards high UV laser power for large area lithography is under investigation.

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