Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 83: Poster: Graphene (with MA/O)

HL 83.12: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Ion Implantation of Graphene - Toward IC Compatible Technologies — •H. Hofsäss1, U. Bangert2,3, W. Pierce2, D. M. Kepaptsoglou3, Q Ramasse3, R Zan1, M. H. Gass3,4, J.A. van den Berg5, C. Boothroyd6, and J Amani11II. Physikalisches Institut, Georg-August-Universität Göttingen, Göettingen, Germany — 2School of Materials, The University of Manchester, Manchester, United Kingdom — 3SuperSTEM Laboratory, Daresbury, United Kingdom — 4AMEC, Walton House, 404 The Quadrant, Birchwood, United Kingdom — 5School of Computing, Science and Engineering, University of Salford, Salford, United Kingdom — 6Ernst Ruska-Centre for Microscopy and Spectroscopy, Juelich Research Centre, Juelich, Germany

Doping of graphene via ultra low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation of mass selected ions at energies of 20 - 30 eV and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.

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