Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 98: Graphene: Spintronics, transistors, and sensors (with DY/MA/O/TT)

HL 98.2: Vortrag

Donnerstag, 3. April 2014, 15:15–15:30, POT 081

Atomic layer deposited aluminum oxide on epitaxial graphene without surface activation — •Peter Wehrfritz1, Florian Speck2, Felix Fromm1, Stefan Malzer3, and Thomas Seyller11TU Chemnitz, Institut für Physik, Chemnitz, Deutschland — 2FAU Erlangen-Nürnberg, Department Physik, Erlangen, Deutschland — 3FAU Erlangen-Nürnberg, Angewandte Physik, Erlangen, Deutschland

Graphene with its high charge carrier mobility is a promising material for analog RF field effect transistors. The preparation of the required insulating layer is still challenging. Atomic layer deposition (ALD) has been extensively studied in the context of alternative dielectrics for silicon-based field effect transistors owing to its capabilities to produce high-quality, homogeneous oxide layers. However, nucleation of ALD growth is strongly suppressed on inert graphene surfaces.

In this contribution we present an approach to obtain conformal aluminum oxide (Al2O3) on epitaxial monolayer graphene on silicon carbide (SiC). We demonstrate that closed layers of Al2O3 can be deposited on the so called buffer layer. This buffer layer covered by ALD-Al2O3 can then be decoupled from the SiC substrate by means of hydrogen intercalation yielding quasi-freestanding monolayer graphene with an insulating dielectric on top. We investigated the quality of the graphene layer and ALD-Al2O3 using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, AFM, and Hall effect measurements.

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