Dresden 2014 – wissenschaftliches Programm
O 19.2: Vortrag
Montag, 31. März 2014, 16:15–16:30, WIL C107
Epitaxial graphene nanostructures on SiC — •Alexander Stöhr1, Stiven Forti1, Ulrike Waizmann1, Thomas Reindl1, Jens Baringhaus2, Alexei Zakharov3, Christoph Tegenkamp2, and Ulrich Starke1 — 1Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany — 2Institut für Festkörperphysik, Leibniz-Universität Hannover, Hannover, Germany — 3MAX IV Laboratory, Lund University, Lund, Sweden
In recent years a lot of effort was put into the realization of graphene devices, in view of their unique electronic properties and the potential application in logical circuits. However, for the use in logical electronics a band gap would be required. This can be achieved by confining the electrons into quasi-onedimensional graphene stripes, called graphene nanoribbons. When patterning graphene, the altering of the electronic properties by the mechanical attack on the ribbon edges as well as residual resist is always an issue. For that matter we chose to structure the SiC-samples before growing graphene, using electron beam lithography and reactive ion etching. Subsequently, the graphene was grown at elevated temperatures, which also removed the residual resist. As a result onedimensional stripes could be obtained and were decoupled from the substrate by intercalation of hydrogen. Characterization by low-energy electron microscopy and angle-resolved photoemission spectroscopy proves the development of quasi-free standing monolayer graphene ribbons.