Parts | Days | Selection | Search | Updates | Downloads | Help

O: Fachverband Oberflächenphysik

O 26: Transport: Graphene (TT jointly with O)

O 26.11: Talk

Tuesday, April 1, 2014, 12:30–12:45, WIL C107

Linear Magnetoresistance in bilayer graphene — •Ferdinand Kisslinger, Christian Heide, Christian Ott, and Heiko B. Weber — Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, ferdinand.kisslinger@physik.uni-erlangen.de

We investigate the magnetoresistance in bilayer graphene obtained by hydrogen intercalation of monolayer graphene grown on the SiC(0001) surface. Whereas in monolayer graphene electron-electron-interaction and weak localization can be observed at low temperatures, a strong linear contribution dominates the magnetoresistance for bilayer graphene. It is found to be nearly temperature independent.

A variation of charge carrier density using a bottom gate and the comparison of different samples is carried out. The entity of data agrees well with a theoretical model [1] that describes a resistance network of Van-der-Pauw resistors. Consistency with the experiment is achieved when a network of resistors with different resistances is assumed. There are several possibilities where such inhomogeneities may originate from. We can exclude some of them and propose dislocations recently found in bilayer graphene [2] as a good candidate causing this effect.
M.M. Parish and P.B. Littlewood , Nature 426 (2003) 162
B. Butz, C. Dolle, F. Niekiel, K. Weber, D. Waldmann, H. B. Weber, B. Meyer and E. Spiecker, Nature (2013), accepted, DOI: 10.1038/nature12780