Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 3: Organic Electronics and Photovoltaics I (DS jointly with HL, O)
O 3.9: Vortrag
Montag, 31. März 2014, 12:00–12:15, ZEU 222
Highly Efficient Silicon/Polythiophene Hybrid Solar Cell Devices — •Matthias Zellmeier1, Johannes Frisch2, Silvia Janietz3, Norbert Koch2, Jörg Rappich1, and Norbert Nickel1 — 1Helmholtz-Zentrum Berlin, Institut für Silizium Photovoltaik, Kekulèstr. 5, D-12489 Berlin — 2Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Str. 6,D-12489 Berlin — 3Fraunhofer-Institut für Angewandte Polymerforschung IAP, Abteilung Polymere und Elektronik, Geiselbergstr. 9, D-14476 Potsdam
Highly efficient hybrid solar cell devices based on crystalline silicon with three different solution processed polymer emitter layers are realized. The inorganic part of the device is optimized with a hole-selective back contact (BSF) and a low defect density hot water oxide (Dit=2×10-12 eV-1cm-2), which provides the necessary wetting properties for the solution processed emitter layers. The applied polymer materials, e.g. poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(3-[3,6-dioxaheptyl]-thiophene) (P3DOT), and poly(3-[2,5,8-trioxanonyl]-thiophene) (P3TOT), differ mainly in the oxygen content in the side groups. Substituting the alkyl chains attached to the thiophene rings with ether groups leads to a modified layer formation during spin coating. The results of the optical, electrical and structural characterization of the polymer layers is correlated to the key figures in the final devices. The open circuit voltage VOC increases from 0.3 V to 0.5 V and the short circuit current jSC increases from 15.2 mA cm-2 up to 28.3 mA cm-2 in the sequence P3HT, P3DOT, P3TOT and results in a power conversion efficiency close to 10 % for a planar Si/P3TOT device.