Dresden 2014 – scientific programme
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O: Fachverband Oberflächenphysik
O 68: Spintronics II (HL jointly with MA, O, TT)
O 68.5: Talk
Thursday, April 3, 2014, 11:00–11:15, POT 151
Direct measurement of the spin splitting in GaAs quantum wells — •Christoph Schönhuber1, Matthias Walser2, Christian Reichl3, Werner Wegscheider3, Gian Salis2, Tobias Korn1, and Christian Schüller1 — 1Universität Regensburg, 93040 Regensburg, Germany — 2IBM Research-Zurich, 8803 Rüschlikon, Switzerland — 3ETH Zurich, 8093 Zurich, Switzerland
We investigate the spin splitting in the conduction band of GaAs quantum wells employing Raman scattering experiments. The investigated system consists of a 12-nm-wide (001)-oriented GaAs/AlGaAs QW, which is asymmetrically Si modulation doped to reach a balanced Rashba and Dresselhaus SOI contribution.
The performed measurements on intrasubband transitions reveal a double peak structure for the [11] direction, while in [1-1] direction there is only a single peak. This anisotropic behavior in the spin splitting is probed for a wide range of transfered wavevectors and in good agreement with the prediction for a system with comparable magnitudes of Rashba and Dresselhaus SOI.