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Dresden 2014 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 101: Transport - Poster Session

TT 101.6: Poster

Thursday, April 3, 2014, 15:00–19:00, P2

Magnetotransport in ferromagnetic Mn5Ge3 and Mn5Ge3C0.8 thin films — •Christoph Sürgers1, Patrick Winkel1, Gerda Fischer1, Inga A. Fischer2, and Li-Te Chang31Physikalisches Institut, Karlsruhe Institute of Technology, 76049 Karlsruhe — 2Institut für Halbleitertechnik, Universität Stuttgart, 70569 Stuttgart — 3Device Research Lab., Dept. of Electrical Engineering., University of California, Los Angeles, CA 90095, USA

Ferromagnetic Mn5Ge3 and Mn5Ge3C0.8 compounds with Curie temperatures of ≈ 300 K and 450 K, respectively, are potential electrode-materials for spin injection into Si and Ge due to their high resistivity and compatibility with CMOS technology [1]. We investigate the temperature dependence of the anisotropic magnetoresistance (AMR) and the anomalous Hall effect of sputtered thin films. The AMR changes sign from negative to positive with increasing temperature with a concomitant increase and sign change of the ordinary Hall coefficient R0 while the anomalous Hall coefficient is independent of temperature. The correlation between the temperature dependence of R0 and of the AMR ratio is discussed by considering a change of the different contributions arising from the electron-like minority-spin band and the hole-like majority-spin band to the conductance with increasing temperature. Magnetoresistance measurements in the Hanle geometry on Mn5Ge3C0.8 electrodes deposited on highly doped n-Ge reveal that spin injection and spin extraction occur, however, at temperatures below 15 K.
I. A. Fischer et al., Semicond. Sci. Technol. 28, 125002 (2013)

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