Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 26: Layer Properties: Electrical, Optical, and Mechanical Properties

DS 26.1: Vortrag

Mittwoch, 18. März 2015, 15:00–15:15, H 2032

Tunable Ion Bombardment Induced by Altering Plasma Confinement in Magnetron Sputtering — •Mathis Trant, Maria Fischer, Kerstin Thorwarth, Hans Josef Hug, and Jörg Patscheider — Empa, Laboratory for Nanoscale Materials Science, Überlandstr. 129, CH-8600 Dübendorf, Switzerland

Ion bombardment is known to influence deposition processes and is widely used to control thin film growth. It offers a variety of possibilities including growth of non-equilibrium phases, changes in residual stress and defect densities. In the case of magnetron sputtering this topic is of special interest, since there is an intrinsic bombardment of particles with typically low kinetic energy.

In this contribution a variety of approaches for altering the ion bombardment are re-viewed by making use of additional plasma confinement. The implementation of an additional magnetic field from an electromagnetic coil in a reactive magnetron co-sputtering process is presented, showing the potential of this method. Among other improvements, an increase of the ion saturation current by a factor of 7 has been achieved. The influence on film properties of different magnetic configurations are discussed on the basis of aluminum sputter deposition in reactive and non-reactive atmospheres.