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DS: Fachverband Dünne Schichten

DS 3: Organic Thin Films

DS 3.6: Talk

Monday, March 16, 2015, 16:45–17:00, H 2032

Thin film growth analysis of quinacridone on SiO2 — •Boris Scherwitzl and Adolf Winkler — Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria

Quinacridone (C20H12N2O2) is part of the group of H-bonded organic dyes with remarkable air stability and attractive semiconducting properties. The combination of inter- as well as intramolecular H-bonding with pi-pi stacking leads to highly crystalline film formations with unique charge transport behaviors. Understanding the initial growth, namely from the sub-monolayer regime up to a few layers, is a key factor in evaluating possible applications in future microelectronic devices. In this contribution, we report our recent efforts and studies on the initial growth behavior of thin quinacridone films on a silicon dioxide substrate under UHV conditions with respect to sample treatment. After preparing and analyzing the substrate surface with Auger Electron Spectroscopy, thin films were created via physical vapor deposition from a Knudsen cell and subsequently analyzed with Thermal Desorption Spectroscopy, Atomic Force Microscopy and Raman Spectroscopy. Both sputter cleaned samples and samples with a carbon layer on top were investigated and yielded similar results. It could be shown, that quinacridone films tend to form bulk-like structures bound by strong hydrogen bonds, even at sub-monolayer coverages. Furthermore, a comparison between metal Knudsen cell and glass evaporation source deposition was made.