Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Poster Session I

DS 36.47: Poster

Thursday, March 19, 2015, 09:30–12:00, Poster A

Comparison of charge neutrality level of Cu/CuO/HfO2 and Si/SiO2/HfO2. — •Zied Rouissi, Simone Brizzi, Silma Alberton Corrêa, Massimo Tallarida, and Dieter Schmeisser — Department of Applied Physics and Sensors, Brandenburg University of Technology, 03046 Cottbus, Germany

Copper Oxide (CuO) is a promising metal oxide semiconductor, which can be used in different applications, such as catalysis, solar energy conversion, and water splitting. In this work, we use resonance photoemission spectroscopy (ResPES) to analyse the electronics properties of HfO2 films deposited on Cu/CuO and Si/SiO2. For that, we deposited 10 cycles of HfO2 by atomic layer deposition (ALD) on Cu/CuO and Si/SiO2 samples and investigated the density states for the valence and conduction bands which were determined by the detailed analysis of the O1s resonance profile obtained by ResPES. We compared the positions of valence band maximum and conduction band minimum, the excitation range for the polaronic states and the range of charge transfer band in Cu/CuO/HfO2 and Si/SiO2/HfO2. Also, we determined the band gap and the charge neutrality level (CNL).

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