Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 37: Focussed Session: Oxide semiconductors II (joint session with HL)
DS 37.12: Vortrag
Donnerstag, 19. März 2015, 18:45–19:00, H 2032
Interdependence of electroformation and hydrogen incorporation in titanium dioxide — Mara Strungaru1, Mihai Cerchez2, •Svenja Herbertz2, Thomas Heinzel2, Mhamed El Achhab3, and Klaus Schierbaum3 — 1Faculty of Physics, Alexandru Ioan Cuza University, 700506, Iasi, Romania — 2Solid State Physics Laboratory, Heinrich-Heine-Universität Düsseldorf — 3Materials Science Laboratory, Heinrich-Heine-Universität Düsseldorf, 40225 Düsseldorf
Nanoporous titanium dioxide films are exposed to molecular hydrogen gas during electroformation. In addition to the usual reversible increase of the conductance of the films as hydrogen is offered, an irreversible decrease of the conductance is observed. The behavior is interpreted in terms of a phenomenological model where current carrying, oxygen-deficient filaments form inside the TiO2 matrix in which hydrogen incorporation decreases the carrier density.
[1] M. Cerchez, H. Langer, M. E. Achhab, T. Heinzel, D. Ostermann, H. Lüder, and D. Ostermann, Appl. Phys. Lett. 103, 033522 (2013). [2] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008). [3] T. Bjørheim, S. Stølen, and T. Norby, Phys. Chem. Chem. Phys. 12, 6817 (2010).