Berlin 2015 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 37: Focussed Session: Oxide semiconductors II (joint session with HL)

DS 37.3: Vortrag

Donnerstag, 19. März 2015, 15:45–16:00, H 2032

Spectroscopic signatures of dinitrogen in Cu₂O:N thin films — •Julian Benz, Philipp Hering, Benedikt Kramm, Bruno K. Meyer, and Peter J. Klar — I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Gießen

Cuprous oxide (Cu₂O) is an intrinsically p-type semiconductor with a band gap of 2.1 eV. By doping with nitrogen it is possible to increase the hole density significantly. Thin films of Cu₂O:N were prepared by reactive RF sputtering, providing N₂ gas as dopant in the plasma. Raman spectra of the N-doped samples exhibit additional signals in the region of 2200 cm⁻¹ to 2300 cm⁻¹ Raman shift, which scale with the nitrogen content. We assume that these signals can be assigned to the vibration of dinitrogen molecules bound at different sites inside the bulk and at the surface. To support our assumption, the influence of oxygen flow during growth, as well as growth and annealing temperature are investigated.