Berlin 2015 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 42: Devices
HL 42.1: Vortrag
Mittwoch, 18. März 2015, 09:30–09:45, EW 015
Charging dynamics of a floating gate transistor with site-controlled quantum dots — •Patrick Maier1, Fabian Hartmann1, Monika Emmerling1, Christian Schneider1, Sven Höfling1,2, Martin Kamp1, and Lukas Worschech1 — 1Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — 2present address: SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, UK
Quantum dots can serve as floating gates when positioned in close vicinity to a transistor channel. We have used templates in combination with regrowth techniques by means of molecular beam epitaxy to position single InAs quantum dots in a GaAs based quantum wire. The floating gate properties were studied in terms of transport measurements. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of microseconds, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.