Berlin 2015 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 57: Optical properties of bulk semiconductors
HL 57.2: Vortrag
Mittwoch, 18. März 2015, 16:30–16:45, EW 015
Pulsed magnetic field spectroscopy up to 70 T on the dilute nitride GaAsN — •Faina Eßer1,2, Harald Schneider1, Stephan Winnerl1, Oleksiy Drachenko3, Amalia Patanè4, Mark Hopkinson5, and Manfred Helm1,2 — 1Institute of Ion Beam Physics and Material Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany — 2Technische Universität Dresden, Germany — 3The Laboratoire National des Champs Magnétiques Intenses of Toulouse, France — 4The University of Nottingham, United Kingdom — 5The University of Sheffield, United Kingdom
Magnetic fields above 45 T offer great opportunities as a tool for materials research but can only be realized in the pulsed regime. We use pulsed magnetic fields up to 70 T for spectroscopic investigations of the dilute nitride GaAsN. This material is a promising candidate for optical applications because of the possibility for tuning its band gap by the nitrogen content. Our studies focus on the exploration of the band structure and in particular on the determination of the effective mass. Cyclotron-resonance spectroscopy indicates that the effective mass is not strongly affected by nitrogen in comparison to previous publications. Our magneto-photoluminescence investigations reveal the formation of localized and delocalized states as a result of the nitrogen incorporation. Delocalized states undergo transitions to localized ones in very high magnetic fields. This result is in good agreement with a pressure dependent study [1].
[1] J. Endicott, A. Patanè, D. Maude, L. Eaves, M. Hopkinson, and G. Hill, Phys. Rev. B 72, 041306(R) (2005)