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Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 60: Quantum dots: Transport

HL 60.5: Talk

Wednesday, March 18, 2015, 18:15–18:30, EW 203

Transport Measurements on a Triple Quantum Dot with Two Bias Voltages — •Monika Kotzian1, Fernando Gallego Marcos2, Gloria Platero2, and Rolf J. Haug11Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstrasse 2, 30167 Hannover, Germany — 2Instituto de Ciencia de Materiales, CSIC, Cantoblanco, 28049 Madrid, Spain

We present transport measurements on a lateral triple quantum dot with a star-like geometry [1] in dependence of two different bias voltages applied simultaneously. The structure is made with local anodic oxidation by AFM on a GaAs/AlGaAs heterostructure, the design allowing to simultaneously measure the conductance along two different paths with two quantum dots in each path. By controlling the potentials via the four gates of the device resonances of two and all three dots can be generated. [2,3] With one lead attached to each dot and using two of the leads as source contacts with two different bias voltages and one lead as a drain contact, novel possibilities arise to study the interaction between the transport paths. For characterization of the system and a better understanding of coupling effects and bias dependent behavior the transport near the triple dot resonance is simulated using the Born-Markov approximation.

[1] M. C. Rogge, R. J. Haug, Phys. Rev. B 77, 193306 (2008). [2] L. Gaudreau, et al., PRL 97, 036807 (2006). [3] M. C. Rogge, R. J. Haug, New Journal of Physics 11, 113037 (2009).

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