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Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 79: Quantum information systems: Si vacancies and NV centers (with TT)

HL 79.5: Talk

Thursday, March 19, 2015, 16:00–16:15, ER 164

Investigating the positively charged nitrogen-vacancy center in diamond as a long lived quantum memory — •Matthias Pfender1, Nabeel Aslam1, Christian Burk1, Denis Antonov1, Sebastian Zaiser1, Helmut Fedder1, Philipp Neumann1, Patrick Simon2, José A. Garrido2, Martin Stutzmann2, and Jörg Wrachtrup113. Physikalisches Institut, Universität Stuttgart — 2Walter Schottky Institut, Technische Universität München

The nitrogen-vacancy defect in diamond is one of the major candidates for a solid-state quantum processor. Its electron spin can be readout and initialized optically. Adjacent nuclear spins (e.g. 14N, 15N, 13C) can be employed as inherently robust qubits [1], readout is facilitated via the electron spin in a QND measurement with T1 lifetimes of several minutes. However, for strongly coupled nuclear spins, the coherence time is limited by the T1 lifetime of the electron spin (≈ 5ms). In Si:P, this obstacle could be overcome by ionizing the P donor to a spinless charge-state [2]. In this work, we employ in-plane gate structures to deterministically switch the charge state of near-surface NVs from NV over NV0 to NV+ [3], while investigating the electron spin properties using the nitrogen nuclear spin as a probe. Since the positive charge state has no unpaired electrons, the nuclear spin coherence time is prolonged beyond the 5ms imposed by the NV electron spin.
Waldherr, G. et al., Nature 506, 204 (2014).
Saeedi, K. et al., Science 342, 830 (2013).
Hauf, M. V. et al., Nano Lett. 14, 2359 (2014).

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