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Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 81: Heterostructures and interfaces

Thursday, March 19, 2015, 15:00–18:15, EW 201

15:00 HL 81.1 Structural and Electronic Properties of Si-ZnO and Si-In2O3 Interfaces from First Principles — •Benjamin Höffling and Friedhelm Bechstedt
15:15 HL 81.2 Computer Simulation of Growth Kinetics of Compound Semiconductors — •Jan Oliver Oelerich and Sergei D. Baranovskii
15:30 HL 81.3 Band alignment in lateral two-dimensional heterostructuresStephan Vercauteren, Ortwin Leenaerts, Bob Schoeters, and •Bart Partoens
15:45 HL 81.4 Stability and capping of magnetite ultra-thin films — •Karsten Fleischer, Ozhet Mauit, and Igor V. Shvets
16:00 HL 81.5 An XPS study on copper oxide based solar cells — •Benedikt Kramm, Philipp Hering, Philipp Schurig, Fabian Michel, Angelika Polity, and Bruno K. Meyer
16:15 HL 81.6 Depth dependence of the ionization energy of shallow hydrogen donor states in ZnO and CdS — •Thomas Prokscha, Hubertus Luetkens, Elvezio Morenzoni, Gerard Nieuwenhuys, Andreas Suter, Max Döbeli, Michael Horisberger, and Ekaterina Pomjakushina
  16:30 Coffee break
16:45 HL 81.7 Strain-relaxation in GaAs / InGaAs core-shell nanowire heterostructures grown by MBE onto Si(111) — •Ali Al Hassan, Andreas Biermanns, Emmanouil Dimakis, Ryan B. Lewis, Lutz Geelhaar, and Ullrich Pietsch
17:00 HL 81.8 A molecular statics study of strain fields and defect stability in axial-heteroepitaxial nanopillars — •Thomas Riedl and Jörg Lindner
17:15 HL 81.9 Time-resolved in situ spectroscopy during formation of single-domain GaP/Si(100) heterointerfaces — •Oliver Supplie, Matthias May, Andreas Nägelein, Gabi Steinbach, Oleksandr Romanyuk, Frank Grosse, Peter Kleinschmidt, Sebastian Brückner, and Thomas Hannappel
17:30 HL 81.10 Structural investigations of graded buffer systems in the TEM — •Florian Aumeier, Josef Loher, Christian Neumann, Dominique Bougeard, Daniel Henzler, Johannes Wild, Felix Schwarzhuber, and Josef Zweck
17:45 HL 81.11 Towards enhancement mode AlInN/AlN/GaN FETs using p-GaN cap layers — •Jonas Hennig, Armin Dadgar, Hartmut Witte, Juergen Blaesing, and Andre Strittmatter
18:00 HL 81.12 Thermal and optical defect spectroscopy in AlInN/AlN/GaN hetero-structures on Si(111) — •Aqdas Fariza, Hartmut Witte, Jonas Hennig, Jürgen Bläsing, Armin Dadgar, Andre Strittmatter, and Alois Krost
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