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Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 90: Phase change / resistive switching (DS with HL)

HL 90.12: Talk

Thursday, March 19, 2015, 18:00–18:15, H 0111

Resistive switching of polycrystalline, multiferroic YMnO3 thin films — •Agnieszka Bogusz1,2, Sławomir Prucnal1, Daniel Blaschke1, Ilona Skorupa1, Danilo Bürger2, Oliver G. Schmidt2,3, and Heidemarie Schmidt21Institute Of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf — 2Department of Materials for Nanoelectronics, Chemnitz University of Technology — 3Institute for Integrative Nanosciences, IFW-Dresden

Resistive switching (RS) phenomena have been widely investigated in the field of materials science, physics, and electrical engineering in the past decade. Recently, multiferroics have been considered as promising candidates for memristive switches. Specific properties of multiferroics might bring additional and/or new functionalities into the memristive switches. This work investigates the RS properties of multiferroic YMnO3 thin films reported as a unipolar resistive switch [1]. YMnO3 was grown at 400C on Pt/Ti/SiO2/Si substrates by pulsed laser deposition (PLD) and crystallized by flash lamp annealing (FLA). Film thickness and the concentration of point defects were controlled during the PLD process. Transport and RS properties of Au/YMnO3/Pt/Ti/SiO2 structures were determined by two-point probe measurements in a top-bottom configuration. Results imply that the filamentary, unipolar RS in YMnO3 originates from the electro-redox reactions induced by the Joule heating. [1] A. Bogusz et al.,AIP Advances 4, 107135 (2014)

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